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1

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Year:

2006

Language:

english

File:

PDF, 338 KB

english, 2006

2

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Yamamoto, Hideki

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 454 KB

english, 2012

3

Optical properties of AlxGa1−xAs/GaAs superlattice solar cells

Kuramoto, Makoto, Urabe, Hiroyuki, Nakano, Tomohiro, Kawaharazuka, Atsushi, Nishinaga, Jiro, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 585 KB

english, 2015

4

RF and DC characteristics in Al2O3/Si3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Narihiko Maeda, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

5

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Kobayashi, Yasuyuki, Kumakura, Kazuhide, Akasaka, Tetsuya, Makimoto, Toshiki

Journal:

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

6

Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Yamada, Syoji, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 568 KB

english, 1990

7

Flow-rate modulation epitaxy of GaAs and AlGaAs

Kobayashi, Naoki, Makimoto, Toshiki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.65 MB

english, 1989

8

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 504 KB

english, 2006

9

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 378 KB

english, 2003

10

High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition

Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 319 KB

1993

11

Al 2 O 3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hashizume, Tamotsu, Anantathanasarn, Sanguan, Negoro, Noboru, Sano, Eiichi, Hasegawa, Hideki, Kumakura, Kazuhide, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 134 KB

english, 2004

12

Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

13

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface

Toshiki Makimoto, Berinder Brar, Herbert Kroemer

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 349 KB

english, 1995

14

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

15

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament

Toshiki Makimoto, Naoki Kobayashi

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

16

Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3

Kazuhide Kumakura, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

17

BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire

Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 340 KB

english, 2007

18

Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 660 KB

english, 2007

19

Low-resistance graded AlxGa1−xN buffer layers for vertical conducting devices on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 396 KB

english, 2007

20

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 196 KB

english, 2009

21

Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 340 KB

english, 2006

22

High hole concentrations in Mg-doped InGaN grown by MOVPE

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 105 KB

english, 2000

23

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 382 KB

english, 2000

24

Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

Hisao Saito, Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 369 KB

english, 1997

25

Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 144 KB

english, 1997

26

MOVPE growth of strained InGaAsN/GaAs quantum wells

Hisao Saito, Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 116 KB

english, 1998

27

Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen

Toshiki Makimoto, Naoki Kobayashi

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 246 KB

english, 1997

28

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

Applied Surface Science

Year:

1998

Language:

english

File:

PDF, 164 KB

english, 1998

29

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

30

Triode-type basic display structure using Si-doped AlN field emitters

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 110 KB

english, 2003

31

High breakdown field of pnp GaN/InGaN/AlGaN DHBTs with AlGaN collector

Kazuhide Kumakura, Atsushi Nishikawa, Toshiki Makimoto

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 223 KB

english, 2007

32

Low on-resistance of GaN p-i-n vertical conducting diodes grown on 4H-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 627 KB

english, 2007

33

Analysis of electrical properties of insulators (Si3N4, SiO2, AlN, and Al2O3)/0.5 nm Si3N4/AlGaN/GaN heterostructures

Narihiko Maeda, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 210 KB

english, 2007

34

High-temperature (300 °C) operation of npn -type GaN/InGaN double heterojunction bipolar transistors

Atsushi Nishikawa, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 184 KB

english, 2008

35

Improvement of device characteristics in MIS AlGaN/GaN heterostructure field-effect transistors by designing insulator/AlGaN structures

Narihiko Maeda, Masanobu Hiroki, Toshiki Makimoto, Takatomo Enoki, Takashi Kobayashi

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 393 KB

english, 2009

36

Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Toshiki Makimoto, Kazuhide Kumarkura, Toshio Nishida, Naoki Kobayashi

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 109 KB

english, 2002

37

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Akasaka, Tetsuya, Gotoh, Hideki, Kobayashi, Yasuyuki, Nakano, Hidetoshi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

38

Diffusion-weighted MRI as an adjunct to mammography in women under 50 years of age: An initial study

Toshiki Kazama, Yoshifumi Kuroki, Mari Kikuchi, Yasunori Sato, Takeshi Nagashima, Yukimasa Miyazawa, Masahiro Sakakibara, Katsuhiko Kaneoya, Yumi Makimoto, Hideyuki Hashimoto, Ken Motoori, Hideyuki Ta

Journal:

Journal of Magnetic Resonance Imaging

Year:

2012

Language:

english

File:

PDF, 848 KB

english, 2012

39

Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

Toshiki Makimoto, Naoki Kobayashi

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

40

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Akasaka, Tetsuya, Gotoh, Hideki, Saito, Tadashi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

41

Excitonic luminescence and absorption in dilute GaAs[sub 1âx]N[sub x] alloy (x

Makimoto, Toshiki, Saito, Hisao, Nishida, Toshio, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

42

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu, Jin-Yu, Huang, Jui-Chien, Desmaris, Vincent, Chang, Chia-Ta, Lu, Chung-Yu, Kumakura, Kazuhide, Makimoto, Toshiki, Zirath, Herbert, Rorsman, Niklas, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 123 KB

english, 2007

43

Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

Maeda, Narihiko, Hiroki, Masanobu, Watanabe, Noriyuki, Oda, Yasuhiro, Yokoyama, Haruki, Yagi, Takuma, Makimoto, Toshiki, Enoki, Takatomo, Kobayashi, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 248 KB

english, 2007

44

Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al 2 O 3 /Si 3 N 4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors

Wang, Chengxin, Maeda, Narihiko, Hiroki, Masanobu, Yokoyama, Haruki, Watanabe, Noriyuki, Makimoto, Toshiki, Enoki, Takotomo, Kobayashi, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

45

BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy

Akasaka, Tetsuya, Makimoto, Toshiki

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 201 KB

english, 2005

46

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm[sup 2] V[sup −1] s[sup −1])

Taniyasu, Yoshitaka, Kasu, Makoto, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

47

[IEEE 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2014.7.15-2014.7.16)] 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - GaN on h-BN technology for release and transfer of nitride devices

Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Yamamoto, Hideki, Makimoto, Toshiki

Year:

2014

Language:

english

File:

PDF, 234 KB

english, 2014

48

Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 377 KB

english, 1997

49

Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Akasaka, Tetsuya, Gotoh, Hideki, Nakano, Hedetoshi, Makimoto, Toshiki

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 313 KB

english, 2005

50

An InGaN-based horizontal-cavity surface-emitting laser diode

Akasaka, Tetsuya, Nishida, Toshio, Makimoto, Toshiki, Kobayashi, Naoki

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 502 KB

english, 2004